8
RF Device Data
Freescale Semiconductor, Inc.
MRF6V3090NR1 MRF6V3090NR5
MRF6V3090NBR1 MRF6V3090NBR5
TYPICAL CHARACTERISTICS
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 18. MTTF versus Junction Temperature -- CW
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
108
105
VDD
=50Vdc
Pout
=18WAvg.
ηD= 28.5%
VDD
=50Vdc,IDQ
= 350 mA, Pout
= 18 W Average
f
MHz
Zsource
?
Zload
?
860
1.58 -- j0.89
3.51 -- j3.98
Zsource
= Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured from
drain to ground.
Figure 19. Series Equivalent Source and Load Impedance (Narrowband Test Circuit)
Zsource
Zload
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
相关PDF资料
MRF6V4300NR5 MOSFET RF N-CH 300W TO-270-4
MRF6VP11KHR6 MOSFET RF N-CH 1000W NI1230
MRF6VP121KHSR6 MOSFET RF N-CH 50V NI-1230S
MRF6VP21KHR6 MOSFET RF N-CH 1000W NI1230
MRF6VP2600HR6 MOSFET RF N-CH 600W NI1230
MRF6VP3091NBR1 MOSFET RF 50V 350MA TO272-4
MRF6VP3450HR6 MOSFET RF N-CH 450W NI-1230
MRF6VP41KHSR7 MOSFET RF N-CH 1000W NI1230S
相关代理商/技术参数
MRF6V4300NBR1 功能描述:射频MOSFET电源晶体管 VHV6 300W TO272WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V4300NBR5 功能描述:射频MOSFET电源晶体管 VHV6 300W Latrl N-Ch SE Broadband MOSFET RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V4300NBR5-CUT TAPE 制造商:Freescale 功能描述:MRF6V4300 Series 600 MHz 110 V RF Power N-Channel Mosfet - TO-272-4
MRF6V4300NR1 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6V4300NR1_10 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
MRF6V4300NR5 功能描述:射频MOSFET电源晶体管 VHV6 300W TO270WB4 RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray
MRF6VP11KGHSR5 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS
MRF6VP11KGHSR6 制造商:Freescale Semiconductor 功能描述:RF POWER TRANSISTOR LDMOS